APTGT300U170D4G APTGT300U170D4G ? rev 1 march, 2006 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 530 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1470 w rbsoa reverse bias safe operation area t j = 125c 600a@1650v these devices are sensitive to electrostatic discharge. proper handing procedures should be follow ed. 3 5 2 1 5 3 4 1 2 v ces = 1700v i c = 300a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? low stra y ind uc tance - m6 connectors for power - m4 connectors for signal ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant single switch trench + field stop igbt ? power modul e
APTGT300U170D4G APTGT300U170D4G ? rev 1 march, 2006 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 1 ma t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 300a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 12ma 5.2 5.8 6.4 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 25 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 0.9 nf t d(on) tur n-o n delay ti me 280 t r rise time 100 t d(off) turn-off delay time 750 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 ? 100 ns t d(on) tur n-o n delay ti me 330 t r rise time 100 t d(off) turn-off delay time 900 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 ? 200 ns e on turn on energy t j = 125c 115 e off turn off energy v ge = 15v v bus = 900v i c = 300a r g = 4.7 ? t j = 125c 95 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 750 i rm maximum reverse leakage current v r =1700v t j = 125c 1000 a i f dc forward current tc=80c 300 a t j = 25c 1.8 2.2 v f forward voltage i f = 300a v ge = 0v t j = 125c 1.9 v t j = 25c 35 e r reverse recovery energy t j = 125c 70 mj t j = 25c 410 t rr reverse recovery time t j = 125c 520 ns t j = 25c 75 q rr reverse recovery charge i f = 300a v r = 900v di/dt =3500a/s t j = 125c 125 c
APTGT300U170D4G APTGT300U170D4G ? rev 1 march, 2006 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.085 r thjc junction to case thermal resistance diode 0.13 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c m6 3 5 torque mounting torque m4 1 2 n.m wt package weight 420 g d4 package outline (dimensions in mm)
APTGT300U170D4G APTGT300U170D4G ? rev 1 march, 2006 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 100 200 300 400 500 600 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 100 200 300 400 500 600 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 50 100 150 200 250 300 0 100 200 300 400 500 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff er 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 gate resistance (ohm s) e (mj) v ce = 900v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT300U170D4G APTGT300U170D4G ? rev 1 march, 2006 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 00.511.522.53 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 25 0 60 120 180 240 300 360 420 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0. 02 0. 04 0. 06 0. 08 0.1 0. 12 0. 14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c /w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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